Doping silica beyond limits with laser plasma for active photonic materials
Doping silica beyond limits with laser plasma for active photonic materials
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DOI:
10.1364/ome.5.002849
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发表时间:
2015-12-01
影响因子:
2.8
通讯作者:
Jose, Gin
中科院分区:
文献类型:
--
作者:
Chandrappan, Jayakrishnan;Murray, Matthew;Jose, Gin
The limited solubility of rare-earths in silica hampers the development of loss-compensated photonic integrated circuits. We report a novel method using femtosecond laser plasma assisted hybrid material integration of rare-earth-doped tellurite with silica, achieving high doping concentration of Er3+ and Yb3+-ions, 1.63 x 10(21) atoms.cm(-3), without segregation validated by Er3+:I-4(13/2) lifetime of 9.1 ms. The sequential ablation of two individual rare-earth (Er3+/Yb3+) doped-tellurite glass targets produces an exceptional intermixing of Er3+ and Yb3+-ions extending to the pristine silica with sharp interface. Formation of such homogeneous glass structure with Er3+-Yb3+-ions in a matrix of silica is not possible to realise by conventional methods. (C)2015 Optical Society of America