Electron‐beam‐induced deposition of copper compound with low resistivity
Electron‐beam‐induced deposition of copper compound with low resistivity
复制标题
低电阻率铜化合物的电子束诱导沉积
DOI：
10.1116/1.588687
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
S. Matsui
中科院分区：
文献类型：
--
作者：
Y. Ochiai;J. Fujita;S. Matsui
采用六氟-乙酰丙酮铜乙烯基-三甲基硅烷（HFA⋅Cu⋅VTMS）气体进行电子束诱导沉积铜。利用30 keV环境扫描电子显微镜和50 keV电子束光刻系统，在HFA⋅Cu⋅VTMS前驱体气氛中对沉积过程进行了验证。测量了沉积材料的沉积速率、组成和电阻率。在160 Pa压力下，沉积速率为6.6 nm/(C/cm2)。室温下电阻率为3.6 μΩ cm，沉积压力为6.7×10−4 Pa。电阻率是迄今为止报道的最低的。
Electron‐beam‐induced deposition of copper was performed using hexafluoro‐acetyoacetonate copper vinyl‐trimethy‐silane (HFA⋅Cu⋅VTMS) gas. The deposition was demonstrated by using a 30 keV environmental scanning electron microscope and a 50 keV electron beam lithography system in an atmosphere of precursor gas: HFA⋅Cu⋅VTMS. The deposition rate, composition, and electrical resistivity of the deposited material were measured. The deposition rate was 6.6 nm/(C/cm2) at a pressure of 160 Pa. The resistivity was 3.6 μΩ cm at room temperature deposited at a pressure of 6.7×10−4 Pa. The resistivity is the lowest so far reported.