Low voltage operation of GaN vertical nanowire MOSFET
Low voltage operation of GaN vertical nanowire MOSFET
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DOI：
10.1016/j.sse.2018.03.001
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发表时间：
2018-07-01
影响因子：
1.7
通讯作者：
Lee, Jung-Hee
中科院分区：
文献类型：
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作者：
Son, Dong-Hyeok;Jo, Young-Woo;Lee, Jung-Hee
利用在TMAH溶液中刻蚀的各向异性侧壁和光刻胶刻蚀回工艺，制作了沟道长度为300 nm、直径为120 nm的GaN栅通用型垂直纳米线MOSFET(VNWMOSFET)。VNWMOSFET具有很低的饱和漏电压(小于0.5V)的输出特性，这在基于宽带隙的器件中是很难观察到的。模拟结果表明，沟道长度较短、直径较窄的VNWMOSFET是造成低电压工作的主要原因。该器件还具有正常关断模式，阈值电压(V-th)为0.7V，极低的漏电流接近10(-14)A，漏感势垒降低(DIBL)为125 mV/V，亚阈值摆幅(SS)为66-122 mV/ten。本文所研究的窄沟道GaN GaN GaA VNWMOSFET在新的低压逻辑应用中具有广阔的应用前景。
GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropic side-wall we etching in TMAH solution and photoresist etch-back process. The VNWMOSFET exhibited output characteristics with very low saturation drain voltage of less than 0.5 V, which is hardly observed from the wide bandgap-based devices. Simulation results indicated that the narrow diameter of the VNWMOSFET with relatively short channel length is responsible for the low voltage operation. The VNWMOSFET also demonstrated normally-off mode with threshold voltage (V-TH) of 0.7 V, extremely low leakage current of similar to 10(-14) A, low drain-induced barrier lowering (DIBL) of 125 mV/V, and subthreshold swing (SS) of 66-122 mV/decade. The GaN GAA VNWMOSFET with narrow channel diameter investigated in this work would be promising for new low voltage logic application.