Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer Layer
Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer Layer
复制标题
使用 PbTiO3 缓冲层控制 Pb(Zr, Ti)O3 薄膜的取向
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
Tadashi Shiosaki Tadashi Shiosaki
中科院分区：
文献类型：
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作者：
M. Shimizu;M. Sugiyama;Hironori Fujisawa Hironori Fujisawa;Tadashi Shiosaki Tadashi Shiosaki
采用金属有机物化学气相沉积（MOCVD）两步生长工艺，通过改变PbTiO3缓冲层的取向来控制Pb（Zr，Ti）O3（PZT）薄膜的取向。分别在（111）取向和（001）、（100）混合取向的PbTiO3缓冲层上生长了（111）取向和（100）取向的PZT薄膜。从原子力显微镜（AFM）观察发现，在（111）取向PbTiO 3层的初始生长阶段，主要的生长机制是二维生长。在两步生长过程中，PbTiO3缓冲层起到了重要的作用，提供致密的晶核在随后的菱形PZT薄膜的生长。研究了缓冲层厚度对PZT薄膜相对介电常数的影响。
The orientation of Pb(Zr, Ti)O3 (PZT) thin films grown by metalorganic chemical vapor deposition (MOCVD) using a two-step growth process was controlled by changing the orientation of the PbTiO3 buffer layer. The (111)-oriented and (100)-oriented PZT films were grown on the (111)-oriented and the (001) and (100) mixed-oriented PbTiO3 buffer layers, respectively. From the atomic force microscope (AFM) observations, it was found that in the initial growth stages of the (111)-oriented PbTiO3 layer, the main growth mechanism was two-dimensional growth. In the two-step growth process, the PbTiO3 buffer layer played the important role of providing dense nuclei in the succeeding growth of rhombohedral PZT thin films. The influence of the thickness of a buffer layer on the relative dielectric constants of PZT films was also investigated.