The Chemical Capacitance as a Fingerprint of Defect Chemistry in Mixed Conducting Oxides
The Chemical Capacitance as a Fingerprint of Defect Chemistry in Mixed Conducting Oxides
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DOI：
10.17344/acsi.2016.2302
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发表时间：
2016-01-01
影响因子：
1.2
通讯作者：
Nenning, Andreas
中科院分区：
文献类型：
--
作者：
Fleig, Juergen;Schmid, Alexander;Nenning, Andreas
混合导电氧化物的氧化学计量取决于氧化学势，从而取决于气相中的氧分压。此外，电压可以改变局部氧化学计量，并且发生这种变化的量由样品的化学电容来量化。阻抗谱可用于探测该化学电容。不同的氧化物（（La，Sr）FeO 3-δ = LSF，Sr（Ti，Fe）O 3-δ = STF，和Pb（Zr，Ti）O-3 = PZT）的阻抗测量，并演示了如何在不同类型的电化学电池的化学电容可能会影响阻抗谱。光谱的定量分析是基于J. Jamnik和J. Maier为混合导电氧化物开发的广义等效电路。讨论了如何从化学电容中提取缺陷的化学信息。
The oxygen stoichiometry of mixed conducting oxides depends on the oxygen chemical potential and thus on the oxygen partial pressure in the gas phase. Also voltages may change the local oxygen stoichiometry and the amount to which such changes take place is quantified by the chemical capacitance of the sample. Impedance spectroscopy can be used to probe this chemical capacitance. Impedance measurements on different oxides ((La, Sr) FeO3-delta = LSF, Sr(Ti, Fe)O3-delta = STF, and Pb(Zr, Ti)O-3 = PZT) are presented, and demonstrate how the chemical capacitance may affect impedance spectra in different types of electrochemical cells. A quantitative analysis of the spectra is based on generalized equivalent circuits developed for mixed conducting oxides by J. Jamnik and J. Maier. It is discussed how defect chemical information can be deduced from the chemical capacitance.