The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition.
The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition.
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DOI：
10.3390/ma8105369
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发表时间：
2015-10-27
期刊：
影响因子：
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通讯作者：
Potter RJ
中科院分区：
文献类型：
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作者：
Herodotou S;Treharne RE;Durose K;Tatlock GJ;Potter RJ
透明导电氧化物（TCO）具有高光学透明度（≥85%）和低电阻率（10−4 Ω·cm），用于各种商业设备。对于用较低成本、地球丰富的材料代替常规TCO（例如氧化铟锡）的兴趣日益增长。在目前的研究中，我们掺杂到薄ZnO薄膜原子层沉积（ALD）的目标性能的一个有效的TCO。掺杂（0-10原子%）的影响Zr）的膜厚，并研究了50-250 nm厚的膜的厚度对性能的影响。作为电子供体的Zr 4+离子的加入显示出降低的电阻率（1.44 × 10−3 Ω·cm）、增加的载流子密度（3.81 × 1020 cm−3）和增加的光学带隙（3.5 eV），其中4.8 at.%兴奋剂当薄膜厚度增加到250 nm时，电子载流子/光子散射减少，导致电阻率进一步降低到7.5 × 10−4 Ω·cm，在可见光/近红外（IR）范围内的平均光学透明度高达91%。ZnO：Zr薄膜的n型性能得到改善，在达到高载流子密度（>1020 cm−3）、10−4 Ω·cm量级的低电阻率和高光学透明度（≥85%）的目标后，有望用于TCO应用。
Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm), increased carrier density (3.81 × 1020 cm−3), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3), low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%).