Conduction band structure of VSe2 studied by inverse photoemission, secondary electron emission and total current spectroscopies
Conduction band structure of VSe2 studied by inverse photoemission, secondary electron emission and total current spectroscopies
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利用反光电发射、二次电子发射和总电流谱研究VSe2的导带结构
DOI：
10.1088/0953-8984/4/15/020
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
H. Hughes
中科院分区：
文献类型：
--
作者：
H. Starnberg;P. Nilsson;H. Hughes
作者使用三种不同的技术研究了 VSe2 的未占据电子态：逆光电子发射光谱 (IPES)、二次电子发射光谱 (SEES) 和目标电流光谱 (TCS)。实验确定的电子能带与能带结构计算非常一致，但通过比较，不同的技术揭示了导带结构的显着不同方面。讨论了这些差异的原因。
The authors have studied the unoccupied electronic states of VSe2 using three different techniques: inverse photoemission spectroscopy (IPES), secondary electron emission spectroscopy (SEES) and target current spectroscopy (TCS). The experimentally determined electron bands are in good agreement with band structure calculations, but on comparison the different techniques reveal significantly different aspects of the conduction band structure. The reasons for these differences are discussed.