Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films

Effect of nitrogen surface doping on the work function and field emission of hydrogenated amorphous carbon films
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DOI:
10.1007/s00339-004-2921-6
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发表时间:
2005
期刊:
Applied Physics A
影响因子:
--
通讯作者:
J. Xu;J. Mei;X. H. Huang;X. Li;Z. Li;W. Li;K. Chen
J. Xu;J. Mei;X. H. Huang;X. Li;Z. Li;W. Li;K. Chen
中科院分区:
其他
文献类型:
--
作者:
J. Xu;J. Mei;X. H. Huang;X. Li;Z. Li;W. Li;K. Chen

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研究了氮表面掺杂对氢化非晶碳膜电子场发射特性的影响。发现氮表面掺杂后发射阈值电场减小,表明薄膜表面发射势垒降低。结果表明,这种改善是由于薄膜表面化学终止引起的偶极子层的形成和化学结构变化导致的有效功函数的降低。
The effect of nitrogen surface doping on the electron field emission characteristics of hydrogenated amorphous carbon films was studied. It was found that the emission threshold electric field decreased after nitrogen surface doping which indicated the reduction of the emission barrier at the film surface. It was demonstrated that this improvement arose from the decrease of the effective work function due to the formation of a dipole layer induced by chemical termination and chemical structural change on the film surface.