3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices
3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices
复制标题
高度大规模 VLSI 器件波动效应的 3D 建模
DOI：
10.1155/2001/43502
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
R. Shaheed
中科院分区：
文献类型：
--
作者：
T. Linton;Shaofeng Yu;R. Shaheed
波动效应在先进的VLSI器件中变得越来越重要，因为它们对电路性能和芯片产量的影响越来越大。这些效果的精确建模通常需要完整的3D模拟，这里用它来分析四种主要的这种效果。多晶硅线边缘粗糙度会导致过多的器件泄漏，这可以以降低性能为代价来减少。相移掩模缺陷可以减小电流驱动，增大电容。对三代技术中引起阈值电压变化的随机掺杂波动进行了评估，并表明适当的尖端缩放可以减小这些变化。最后，通过α粒子撞击的研究，评估了SOI在提高软误差可靠性方面的有效性。
Fluctuation effects are becoming important in advanced VLSI devices because of their increasing impact on circuit performance and chip yields. Accurate modelling of these effects generally requires full 3D simulation, which is used here to analyse four of the primary such effects. Polysilicon line edge roughness causes excess device leakage, which can be reduced at the cost of decreased performance. Phase-shift mask defects can reduce current drive and increase capacitance. Random dopant fluctuation, which causes variation in threshold voltage, is evaluated for three technology generations and it is shown that proper tip scaling can reduce these variations. Finally, a study of alpha particle strikes evaluates the effectiveness of SOI in improving soft error reliability.