Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure
Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure
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DOI：
10.1021/acsnano.8b01810
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发表时间：
2018-07-01
期刊：
影响因子：
17.1
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Si, Mengwei;Liao, Pai-Ying;Ye, Peide D.
我们展示了具有MoS2和CuInP2S6二维范德华异质结构的室温铁电场效应晶体管（fe - fet）。铁电CuInP2S6是一种2D铁电绝缘体，集成在MoS2通道上，提供2D/2D半导体/绝缘体界面，没有悬空键。基于MoS2-和cuinp2s6的二维范德华异质结构fe - fet在转移特性上表现出明显的逆时针磁滞回线，证明了它们的铁电特性。这种稳定的非易失性存储特性还可以通过MoS2晶体管的后门偏置进行调制，因为MoS2通道与铁电CuInP2S6之间的电容匹配可以调谐，从而提高开关电流比。同时，该薄膜还显示出电阻开关特性，在低阻和高阻状态之间具有超过4个数量级的通/关比，这也为电阻随机存取存储器的应用提供了前景。
We demonstrate room-temperature ferroelectric field-effect transistors (Fe-FETs) with MoS2 and CuInP2S6 two-dimensional (2D) van der Waals heterostructure. The ferroelectric CuInP2S6 is a 2D ferroelectric insulator, integrated on top of MoS2 channel providing a 2D/2D semiconductor/insulator interface without dangling bonds. The MoS2- and CuInP2S6-based 2D van der Waals heterostructure Fe-FETs exhibit a clear counterclockwise hysteresis loop in transfer characteristics, demonstrating their ferroelectric properties. This stable nonvolatile memory property can also be modulated by the back-gate bias of the MoS2 transistors because of the tuning of capacitance matching between the MoS2 channel and the ferroelectric CuInP2S6, leading to the enhancement of the on/off current ratio. Meanwhile, the CuInP2S6 thin film also shows resistive switching characteristics with more than four orders of on/off ratio between low- and high-resistance states, which is also promising for resistive random-access memory applications.