Free exciton emission in GaN
Free exciton emission in GaN
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DOI：
10.1103/physrevb.54.2518
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发表时间：
1996-07-15
影响因子：
3.7
通讯作者：
Akasaki, I
中科院分区：
文献类型：
--
作者：
Kovalev, D;Averboukh, B;Akasaki, I
我们对氮化镓中的自由激子发射进行了详细的研究。利用光致发光和光致发光激发技术，揭示了氮化镓中激子-声子相互作用在逃逸激子态和自由激子发射级联产生中的主导作用。在光致发光和光致发光激发光谱中观察到多达6个纵向光学声子复制品。通过对自由激子线形的分析，我们可以得出结论，自由激子发射和自由激子与LO声子的相互作用必须在动量守恒定律的框架内描述。发现激子动能分布为麦克斯韦分布，具有晶格的温度。这表明与其他纤锌矿型半导体相比，声子上的自由激子散射率提高了。
We present a detailed study of the free exciton emission in GaN. Photoluminescence and photoluminescence excitation techniques are employed to show the dominant role of exciton-phonon interaction in the creation of the flee exciton states and the free exciton emission cascade in GaN. Up to six longitudinal optical (LO) phonon replicas are observed in both photoluminescence and photoluminescence excitation spectra. From an analysis of the free exciton line shape we are able to conclude that free exciton emission and the interaction of free excitons with LO phonons have to be described within the framework of the momentum conservation law. The exciton kinetic energy distribution is found to be a Maxwellian one having the temperature of the lattice. This suggests an enhanced rate of free exciton scattering on the acoustic phonons, in contrast to other wurzite-type semiconductors.