Manipulation of Spin-Torque Generation Using Ultrathin Au
Manipulation of Spin-Torque Generation Using Ultrathin Au
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DOI：
10.1103/physrevapplied.9.064016
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发表时间：
2018-06-12
影响因子：
4.6
通讯作者：
Ando, Kazuya
中科院分区：
文献类型：
--
作者：
An, Hongyu;Haku, Satoshi;Ando, Kazuya
电流感生自旋轨道力矩的产生和控制是自旋电子学中的一个重要研究课题。然而，尽管自旋轨道电子学取得了重要进展，但自旋力矩产生的电控制仍然是难以捉摸和具有挑战性的。我们报告的电子控制的自旋力矩产生使用离子液体门控的金Au。我们表明，通过简单地沉积一个SiO2覆盖层上的超薄Au/Ni81Fe19双层，自旋扭矩产生效率大大提高了最大的7倍。这种增强是由于SiO_2的沉积导致Au/Ni_（81）Fe_（19）界面粗糙，从而导致界面自旋轨道散射增强所致。我们进一步表明，自旋扭矩产生效率从passive Au膜可以可逆地操纵的因素2使用离子门与外部电场在一个小范围内的1 V。这些结果铺平了一条通往自旋电子学应用中的自旋扭矩产生的有效控制的道路。
The generation and the manipulation of current-induced spin-orbit torques are of essential interest in spintronics. However, in spite of the vital progress in spin orbitronics, electric control of the spin-torque generation still remains elusive and challenging. We report on electric control of the spin-torque generation using ionic-liquid gating of ultrathin Au. We show that by simply depositing a SiO2 capping layer on an ultrathin-Au/Ni81Fe19 bilayer, the spin-torque generation efficiency is drastically enhanced by a maximum of 7 times. This enhancement is verified to be originated from the rough ultrathin-Au/Ni81Fe19 interface induced by the SiO2 deposition, which results in the enhancement of the interface spin-orbit scattering. We further show that the spin-torque generation efficiency from the ultrathin Au film can be reversibly manipulated by a factor of 2 using the ionic gating with an external electric field within a small range of 1 V. These results pave a way towards the efficient control of the spin-torque generation in spintronic applications.