Light-induced metastability in thin nanocrystalline silicon films
Light-induced metastability in thin nanocrystalline silicon films
复制标题
纳米晶硅薄膜中的光诱导亚稳定性
DOI：
10.1080/14786430902933845
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发表时间：
2009
影响因子：
1.6
通讯作者：
Arokia Nathan
中科院分区：
文献类型：
--
作者：
Marius Bauza;N. P. Mandal;A. Ahnood;A. Sazonov;Arokia Nathan
本文研究了光致亚稳态对nc-Si：H薄膜导电性能的影响。为了研究表面效应的作用，考虑了两种样品类型：一种是表面有意氧化形成氧化物帽层，另一种是蚀刻氧化物层。虽然在光浸泡的不同阶段，但是已经观察到Staebler-Wronski效应（SWE）和持续光电流（PPC）。对于nc-Si：H样品与帽层，我们属性的存在下，SWE和PPC的缺陷产生和界面电荷捕获，而在没有帽层，这些影响可能是由未识别的光结构变化和缺陷产生。
This paper examines the influence of light-induced metastability on conduction in thin nc-Si:H films. To investigate the role of surface effects, two sample types are considered: one with the surface intentionally oxidized to form an oxide cap layer and the other with etched oxide layer. Both the Staebler–Wronski effect (SWE) and persistent photo-current (PPC) have been observed, albeit at different phases of light soaking. For the nc-Si:H sample with a cap layer, we attribute the presence of SWE and PPC to defect generation and interface charge trapping, while, in the absence of the cap layer, these effects could be caused by unidentified photo-structural changes and defect generation.