Molecular simulation on adsorption of helium by activated carbon in 4-10 K
Molecular simulation on adsorption of helium by activated carbon in 4-10 K
复制标题
4-10 K 活性炭吸附氦气的分子模拟
DOI：
10.1088/1757-899x/755/1/012111
复制
发表时间：
2020-03
期刊：
影响因子：
--
通讯作者：
Wang Junjie
中科院分区：
文献类型：
--
作者：
Xi Xiaotong;Wang Jue;Chen Liubiao;Zhou Yuan;Wang Junjie
在液氦温度区域，氦的比热迅速增加，因此预计氦在活性炭上的吸附行为可用于4K级低温冷却器的回热器中，以提高制冷机的性能。
In the liquid helium temperature region, the specific heat of helium increases rapidly, so adsorption behavior of helium on activated carbon is expected to be used in the regenerator of 4-K class cryocoolers to improve the performance of the refrigerator. In this paper, we use Grand Canonical Monte Carlo method to simulate the adsorption of helium on the amorphous carbon in 4-10 K. And the structural parameters of amorphous carbons and the effect of temperature, pressure, graphite slice’s size and density of amorphous carbon on the adsorption amount were analyzed. The results show that the amorphous carbon constructed from the larger size graphite slice has a smaller specific surface area and a larger pore volume. And as the temperature decreases and the pressure increases, the amount of adsorbed helium increases. In addition, we have found that mixed-filled amorphous carbon can obtain higher specific surface area and pore volume, and has better comprehensive properties.
登录
查看更多内容
影响因子：
10.9
作者：
Takaomi Suzuki;K. Kaneko;N. Setoyama;M. Maddox;K. Gubbins
通讯作者：
Takaomi Suzuki;K. Kaneko;N. Setoyama;M. Maddox;K. Gubbins
DOI：
10.1007/s10450-005-1088-6
发表时间：
2005
期刊：
Adsorption
影响因子：
--
作者：
Jinchen Liu;P. Monson
通讯作者：
Jinchen Liu;P. Monson
影响因子：
0.3
作者：
Y. Matsubara;D. Koh
通讯作者：
Y. Matsubara;D. Koh
DOI：
10.1016/j.phpro.2015.06.095
发表时间：
2015
期刊：
Physics Procedia
影响因子：
--
作者：
S. Iwai;M. Takahashi;H. Miyazaki;T. Tosaka;K. Tasaki;S. Hanai;S. Ioka;Kazuo Watanabe;S. Awaji;H. Oguro
通讯作者：
S. Iwai;M. Takahashi;H. Miyazaki;T. Tosaka;K. Tasaki;S. Hanai;S. Ioka;Kazuo Watanabe;S. Awaji;H. Oguro
影响因子：
6.7
作者：
Xiaoqing Lu;Dongliang Jin;Shuxian Wei;Mingmin Zhang;Qing Zhu;Xiaofan Shi;Zhigang Deng;Wenyue Guo;W. Shen
通讯作者：
Xiaoqing Lu;Dongliang Jin;Shuxian Wei;Mingmin Zhang;Qing Zhu;Xiaofan Shi;Zhigang Deng;Wenyue Guo;W. Shen