Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions
Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions
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平衡条件下热生长 SiO2 中 Si 的自扩散
DOI：
10.1063/1.1554487
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发表时间：
2003
影响因子：
3.2
通讯作者：
K. Shiraishi
中科院分区：
文献类型：
--
作者：
Tomonori Takahashi;S. Fukatsu;K. Itoh;M. Uematsu;A. Fujiwara;H. Kageshima;Yasuo Takahashi;K. Shiraishi
在1150 ° C和1300 °C之间的温度下，在平衡条件下，使用同位素异质结构（natSiO 2/28 SiO2），在光刻级硅片上热生长SiO2中Si的自扩散系数已经被确定。通过适当的热处理诱导Si自扩散，用二次离子质谱（西姆斯）测定了30 Si同位素从natSiO 2到28 SiO2层的扩散深度分布。在本研究中发现的1150-1300 °C的扩散系数比在存在过量硅的情况下用超导级SiO2测量的值小两个数量级以上，即，在非平衡条件下，同意非常好，与先前报道的值的Si自扩散在熔融石英在平衡条件下。
Self-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si self-diffusion was induced by appropriate heat treatments, and the diffusion depth profiles of 30Si isotope from natSiO2 to 28SiO2 layers were determined by secondary ion mass spectrometry (SIMS). The diffusion coefficients found in the present study for 1150–1300 °C are more than two orders of magnitude smaller than the values measured with semiconductor-grade SiO2 in the presence of excess silicon, i.e., in nonequilibrium conditions, and agree very well with previously reported values of Si self-diffusion in fused silica under equilibrium conditions.