Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects
Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects
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DOI：
10.1016/j.microrel.2007.01.090
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发表时间：
2008-01-01
影响因子：
1.6
通讯作者：
Crespo, A.
中科院分区：
文献类型：
--
作者：
Heller, E. R.;Crespo, A.
AlGaN/GaN高电子迁移率晶体管（HEMT）器件操作从亚微米尺度到衬底建模，使用用于有源器件的电热器件模型与器件内的真实功率耗散和用于考虑衬底的耦合三维热模型的组合。器件内各个点的温度被确定为偏置条件、衬底厚度和温度、指状物数量以及栅极长度和间距的函数。作为一个例子，我们已经使用我们的模型来表明，行业相关设备的寿命测试结果可以显着影响所使用的确切的测试技术。(c)2007年由Elsevier Ltd.出版
AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the sub-micrometer scale to the substrate using a combination of an electro-thermal device model for the active device with realistic power dissipation within the device and a coupled three dimensional thermal model to account for the substrate. Temperatures for various points within a device were determined as a function of biasing conditions, substrate thickness and temperature, number of fingers, and gate length and pitch. As an example, we have used our model to show that life test results of industry-relevant devices can be significantly affected by the exact testing technique used. (c) 2007 Published by Elsevier Ltd.