Electrically driven single photon emission from a CdSe/ZnSSe/MgS semiconductor quantum dot
Electrically driven single photon emission from a CdSe/ZnSSe/MgS semiconductor quantum dot
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CdSe/ZnSSe/MgS 半导体量子点的电驱动单光子发射
DOI：
10.1002/pssc.201300627
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
G. Bacher
中科院分区：
文献类型：
--
作者：
W. Quitsch;T. Kümmell;A. Gust;C. Kruse;D. Hommel;G. Bacher
我们演示了嵌入谐振腔发光二极管的CdSe/ZnSSe/MgS单量子点的电驱动单光子发射。采用Pd/Au顶部触点进行局部载流子注入。单量子点电致发光从顶部触点的纳米光刻孔中获得atT= 4 K。在低电流密度下，可以实现g(2)(0) = 0.16的反聚束。（©2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
We demonstrate electrically driven single photon emission from a CdSe/ZnSSe/MgS single quantum dot embedded in a resonant cavity light emitting diode. Patterned Pd/Au top contacts are used to inject the charge carriers locally. Single quantum dot electroluminescence is obtained atT= 4 K from nanoapertures lithographically defined in the top contacts. At low current densities, antibunching with a value of g(2)(0) = 0.16 is achieved. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)