Characterization of EUV irradiati on effects on Polystyrene Derivatives Studied by X-ray Photoelectron Spectroscopy(XPS) and Ultraviolet Photoelectron Spectroscopy(UPS)
Characterization of EUV irradiati on effects on Polystyrene Derivatives Studied by X-ray Photoelectron Spectroscopy(XPS) and Ultraviolet Photoelectron Spectroscopy(UPS)
复制标题
用X射线光电子能谱(XPS)和紫外光电子能谱(UPS)表征EUV辐照对聚苯乙烯衍生物的影响
DOI：
10.1117/12.879303
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and S. Tagawa
中科院分区：
文献类型：
--
作者：
H. Yamamoto;T. Kozawa;and S. Tagawa
极紫外（EUV）光刻是实现22nm HP光刻及更高光刻的最有前途的技术之一。EUV抗蚀剂需要将分辨率限制提高到小于20nm hp。为了达到这样的性能，需要在超薄抗蚀剂膜条件下开发创新材料以防止线崩溃。此外，需要与超薄抗蚀剂膜兼容的更精细的蚀刻工艺。在这项研究中，我们将报告我们的几种方法，材料和工艺，以形成小于20纳米的HP图案在超薄膜条件下。我们还将介绍我们的三层系统形成的硅ARC堆栈和有机硬掩模（欧姆）堆栈的组合，用于精细蚀刻工艺。
Extreme ultraviolet (EUV) lithography is one of the most promising technologies for achieving 22nm HP lithography and beyond. EUV resist is required to improve resolution limit down to less than 20nm hp. To achieve such a performance, innovative materials' development is necessary under ultra-thin resist film condition for preventing line collapse. In addition, more refined etching processes compatible with ultra-thin resist film are needed. In this study, we will report our several approaches for both materials and processes towards forming less than 20nm HP pattern under ultra-thin film condition. We will also introduce our tri-layer system formed with combination of Si-ARC stack and organic hard mask (OHM) stack for refined etching process.