TEM characterization of a magnetic tunnel junction
TEM characterization of a magnetic tunnel junction
复制标题
磁隧道结的 TEM 表征
DOI：
10.1088/1742-6596/126/1/012058
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
Harnchana V
中科院分区：
文献类型：
--
作者：
Harnchana V
TEM characterization of a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) has been performed. A TEM cross section was prepared using focused ion beam (FIB) milling techniques. However, the high energy Ga+ beam causes sample damage and induces the redeposition of the sputtered materials on the section surface. Complementary investigation of the crystal structure of the active trilayer in the MTJ was performed by depositing films directly onto a TEM holey carbon film. The TEM imaging, selected area electron diffraction (SAED) and energy dispersive X-ray (EDX) analysis were employed to study the nanostructure. The MgO layer is found to be incompletely crystalline with randomly oriented MgO crystallites. The CoFeB layer is amorphous and is homogenously deposited.
隧道磁阻光谱：Cu38Ni62 中温度依赖性自旋极化能带结构
DOI：
--
发表时间：
2005
期刊：
影响因子：
--
作者：
A. Hindmarch;C. Marrows;B. Hickey
通讯作者：
B. Hickey
硬盘驱动器的新高度
影响因子：
24.2
作者：
J. Zhu
通讯作者：
J. Zhu