Nonvolatile multivalued memory effects in electronic phase-change manganites controlled by Joule heating
Nonvolatile multivalued memory effects in electronic phase-change manganites controlled by Joule heating
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DOI：
10.1103/physrevb.74.052404
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发表时间：
2006-07
影响因子：
3.7
通讯作者：
H. Song;M. Tokunaga;S. Imamori;Y. Tokunaga;T. Tamegai
中科院分区：
文献类型：
--
作者：
H. Song;M. Tokunaga;S. Imamori;Y. Tokunaga;T. Tamegai
研究了Nd_{0.65}Ca_{0.35} MnO_3和（Nd_{1-y}Sm_{y}）_{0.5}Sr_{0.5} MnO_3（y=0.75）单晶在铁磁金属态和电荷有序绝缘态之间的滞后区中，在磁场、电流和电压脉冲作用下的非易失性多值存储效应。在这项研究中观察到的电流/电压效应解释的自加热效应，这使我们能够控制巨大的电阻效应。这种热循环引起的电子固态和液态之间的转换可以被视为相变硫属化合物中原子晶体/非晶转变的电子版本。
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between ferromagnetic metallic and charge-ordered insulating states. The current/voltage effects observed in this study are explained by the self-heating effect, which enable us to control the colossal electroresistance effects. This thermal-cycle induced switching between electronic solid and liquid states can be regarded as electronic version of atomic crystal/amorphous transitions in phase-change chalcogenides.