Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.
Mode locking a 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber.
复制标题
使用 GaInNAs 可饱和吸收器锁模 1550 nm 半导体盘激光器。
DOI：
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发表时间：
2005
期刊：
影响因子：
3.6
通讯作者：
S. Marcinkevičius
中科院分区：
文献类型：
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作者：
H. Lindberg;M. Sadeghi;M. Westlund;Shumin Wang;A. Larsson;M. Strassner;S. Marcinkevičius
利用GaInNAs可饱和吸收镜实现了1550 nm半导体圆盘激光器的被动锁模。为了减少材料发热并实现高功率操作，将50微米厚的金刚石散热器粘合到增益芯片的表面。该激光器工作在2.97 GHz的重复频率，并发出近变换限制的3.2 ps脉冲，平均输出功率为120 mW。
Passive mode locking of an optically pumped, InP-based, 1550 nm semiconductor disk laser by using a GaInNAs saturable absorber mirror is demonstrated. To reduce material heating and enable high-power operation, a 50 microm thick diamond heat spreader is bonded to the surface of the gain chip. The laser operates at a repetition frequency of 2.97 GHz and emits near-transform-limited 3.2 ps pulses with an average output power of 120 mW.