Synaptic potentiation and depression in Al:HfO2-based memristor
Synaptic potentiation and depression in Al:HfO2-based memristor
复制标题
DOI：
10.1016/j.mee.2015.04.052
复制
发表时间：
2015-11-01
影响因子：
2.3
通讯作者：
Spiga, S.
中科院分区：
文献类型：
--
作者：
Covi, E.;Brivio, S.;Spiga, S.
电阻开关器件最初被设想用于存储器应用。最近，它们也被研究为神经形态应用的人工突触。因此，大量的努力，目前致力于优化材料和编程技术来设计一个设备，能够模拟生物突触的行为，即能够逐渐增加和减少其电导时，适当的电信号applied.In本文中，Al：HfO2为基础的忆阻器作为一个合适的设备作为人工突触在未来的神经形态电路。选择一系列相同的编程脉冲是因为其易于实现为有效且简单的编程算法，以模拟在生物突触中观察到的强度变化。利用该算法，我们证明了设备的电导可以逐渐增加和逐渐减少，提供了准确的选择脉冲幅度和时间宽度。(C)2015爱思唯尔B.V.保留所有权利。
Resistive switching devices were at first conceived to be used in memory applications. Recently, they have also been studied as artificial synapses for neuromorphic applications. Therefore, lots of efforts are currently devoted to optimise both materials and programming techniques to design a device able to emulate the behaviour of biological synapses, i.e. able to gradually increase and decrease its conductance when proper electrical signals are applied.In this paper, an Al:HfO2 based memristor is presented as a suitable device as an artificial synapse in future neuromorphic circuits. A train of identical programming pulses was chosen because of its ease of implementation as an efficient and simple programming algorithm to emulate the strength change observed in biological synapses. With this algorithm we demonstrate that the conductance of the device can be both gradually increased and gradually decreased, provided an accurate choice of pulse amplitude and time width is made. (C) 2015 Elsevier B.V. All rights reserved.