Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors
Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors
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DOI：
10.1007/s10909-012-0461-6
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发表时间：
2012-01
影响因子：
2
通讯作者：
T. Wada;H. Nagata;H. Ikeda;Y. Arai;M. Ohno;K. Nagase
中科院分区：
文献类型：
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作者：
T. Wada;H. Nagata;H. Ikeda;Y. Arai;M. Ohno;K. Nagase
We are developing low power cryogenic readout integrated circuits (ROICs) for large format far-infrared image sensors using fully-depleted-silicon-on-insulator (FD-SOI) CMOS technology. We have evaluated the characteristics of MOS FETs fabricated by the FD-SOI CMOS technology and have found that both p-ch and n-ch FETs show good static performance below the liquid helium temperature, where n-ch FETs fabricated by conventional bulk-CMOS technology usually suffer from anomalous behaviors such as kink and hysteresis. We have also designed and fabricated an operational amplifier (OP-AMP) and have successfully demonstrated that the OP-AMP works at the liquid helium temperature with an open loop gain of 7000 and a power consumption of 1.3 μW. The noise is dominated by mainly 1/f and has a value of at 1 Hz.
