Mixed-phase β-Ga2O3 and SnO2 metal-semiconductor-metal photodetectors with extended detection range from 293 nm to 330 nm
Mixed-phase β-Ga2O3 and SnO2 metal-semiconductor-metal photodetectors with extended detection range from 293 nm to 330 nm
复制标题
混合相 β-Ga2O3 和 SnO2 金属-半导体-金属光电探测器，检测范围从 293 nm 扩展到 330 nm
DOI：
10.1016/j.jallcom.2020.157080
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发表时间：
2021-02-05
影响因子：
6.2
通讯作者：
Li, Xiu-Yan
中科院分区：
文献类型：
--
作者：
Fan, Ming-Ming;Cao, Ling;Li, Xiu-Yan
在这篇文章中，我们展示了在管式炉中通过化学气相沉积在c面蓝宝石（c-Al_2 O_3）上的具有主要的（（2）在棒01上）-β-Ga_2 O_3和（200）-SnO_2取向的β-Ga_2 O_3和SnO_2混合相薄膜。透射电子显微镜（TEM）显示它们在衬底上同时生长，这是由于（2）在条01上）-β-Ga 2 O3/c-Al 2 O3（类似于3%）和（200）-SnO 2/c-Al 2 O3（类似于0.6%）的小失配。因此，我们也成功地证明了优先取向（2）棒01）-β-Ga 2 O3和（200）-SnO 2混合相薄膜通过控制在前体中的Sn和Ga的比例。在40 V电压下，随着混合相薄膜中SnO 2含量的增加，MSM光电探测器的光电性能得到了调制，暗电流从11 pA增加到4 nA，紫外光响应从240 nm（2 mA/W）增加到260 nm（1.15 A/W），截止波长为274 ~ 297 nm，检测范围为293 ~ 330 nm。我们的器件表现出类似于Ga 2 O3的光响应特性，而不是类似于SnO 2的特性，具有较低的暗电流，相当的响应率和探测率，以及比部分纯相和混合相Ga 2 O3基光电探测器更快的响应时间，具有不可调谐的探测范围，这有望在掺杂或合金化期间扩展其他Ga 2 O3基混合相材料的更广泛应用，为实现探测范围可控的高性能Ga 2 O 3基光电探测器开辟了一条新的可行途径。(c)2020 Elsevier B. V.保留所有权利。
In this article, we demonstrate beta-Ga2O3 and SnO2 mixed-phase thin films with dominant ((2) over bar 01)-beta-Ga2O3 and (200)-SnO2 orientations on c-face sapphire (c-Al2O3) by chemical vapor deposition in a tube furnace. Transmission electron microscopy (TEM) reveals their simultaneous growth on substrate due to the small mismatches of ((2) over bar 01)-beta-Ga2O3/c-Al2O3 (similar to 3%) and (200)-SnO2/c-Al2O3 (similar to 0.6%). Therefore, we also successfully demonstrate preferred-orientation ((2) over bar 01)-beta-Ga2O3 and (200)-SnO2 mixed-phase thin films by controlling the Sn and Ga ratios in precursors. At 40 V, the photoelectric properties of metal-semiconductor-metal (MSM) photodetectors are modulated with more SnO2 content in mixed-phase thin films, including the dark current from 11 pA to 4 nA, the peak response in UVC from 240 nm (2 mA/W) to 260 nm (1.15 A/W), the tunable cut-off wavelength from 274 nm to 297 nm, and the extended detection range at long wavelength from 293 nm to 330 nm. Our devices show Ga2O3-like photoresponse properties rather than SnO2-like properties with lower dark current, comparable responsivity and detectivity, and faster response time than the performances of parts of the pure and mixed-phase Ga2O3-based photodetectors with untunable detection rang, which is expected to extend wider applications of other Ga2O3-based mixed-phase materials during doping or alloying, and paves a new and feasible way to realize high-performance Ga2O3-based photodetectors with controllable detection range. (c) 2020 Elsevier B.V. All rights reserved.