Single atomic contact adhesion and dissipation in dynamic force microscopy
Single atomic contact adhesion and dissipation in dynamic force microscopy
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DOI：
10.1103/physrevlett.96.106101
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发表时间：
2006-03-17
影响因子：
8.6
通讯作者：
Custance, O
中科院分区：
文献类型：
--
作者：
Oyabu, N;Pou, P;Custance, O
通过结合动态力显微镜实验和第一性原理计算，我们研究了纳米微凸体-针尖-和半导体表面-Ge（111）-c（2x 8）之间的单原子接触的粘附力。纳米凸体的终止已经原子的特征在于在特定的网站与化学力计算使用许多原子模型，不同的结构，组成和相对于表面的相对取向的测量的短程力的广泛比较。这种彻底的表征使我们能够解释原子分辨率图像和力谱测量中观察到的耗散信号，以及识别耗散通道和相关的原子过程。
By combining dynamic force microscopy experiments and first-principles calculations, we have studied the adhesion associated with a single atomic contact between a nanoasperity-the tip apex-and a semiconductor surface-the Ge(111)-c(2x8). The nanoasperity's termination has been atomically characterized by extensive comparisons of the measured short-range force at specific sites with the chemical forces calculated using many atomic models that vary in structure, composition, and relative orientation with respect to the surface. This thorough characterization has allowed us to explain the dissipation signal observed in atomic-resolution images and force spectroscopic measurements, as well as to identify a dissipation channel and the associated atomic processes.