Giant negative uniaxial magnetocrystalline anisotropy of Co80Ir20 sputtered films with perfect hexagonal-close-packed and composition-modulated atomic layer stacking
Giant negative uniaxial magnetocrystalline anisotropy of Co80Ir20 sputtered films with perfect hexagonal-close-packed and composition-modulated atomic layer stacking
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DOI：
10.1063/1.4773998
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发表时间：
2013-01-07
影响因子：
4
通讯作者：
Takahashi, Migaku
中科院分区：
文献类型：
--
作者：
Nozawa, Naoki;Saito, Shin;Takahashi, Migaku
研究了具有负单轴磁晶各向异性（K-u）的Co80Ir20薄膜的层序和原子位排列规律。基材在600℃下加热可将Co80Ir20的负K-u提高到-9.6 x 10(6) erg/cm(3)。在600℃下制备的Co80Ir20薄膜的x射线衍射分析和扫描透射电镜显示：(1)接近完美的六边形密排（hcp）堆叠结构；(2)由随机顺序的富、贫ir层组成的原子层状结构。这些hcp和成分调制的原子层堆叠结构被认为是负K-u增强的原因。(C) 2013年美国物理研究所。[http://dx.doi.org/10.1063/1.4773998]
Co80Ir20 films with negative uniaxial magnetocrystalline anisotropy (K-u) are investigated with respect to the regularity of the stacking sequence and atomic site arrangement. Substrate heating at 600 degrees C enhances the negative K-u of Co80Ir20 to -9.6 x 10(6) erg/cm(3). X-ray diffraction analysis and scanning transmission electron microscopy of the Co80Ir20 film fabricated at 600 degrees C indicate (1) a near perfect hexagonal-close-packed (hcp) stacking structure and (2) an atomic layered structure that consists of randomly sequenced Ir-rich and Ir-poor layers. These hcp and composition-modulated atomic layer stacking structures are considered to be the reason for the enhancement of the negative K-u. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773998]