Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures
Evaporative electron cooling in asymmetric double barrier semiconductor heterostructures
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DOI：
10.1038/s41467-019-12488-9
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发表时间：
2019-10
影响因子：
16.6
通讯作者：
A. Yangui;M. Bescond;T. Yan;N. Nagai;K. Hirakawa
中科院分区：
文献类型：
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作者：
A. Yangui;M. Bescond;T. Yan;N. Nagai;K. Hirakawa
高速、密集封装的电子/光子器件的快速发展为我们的社会带来了前所未有的好处。然而，这种技术趋势反过来导致了散热的巨大增加，这降低了器件的性能和寿命。今后的科学和技术挑战在于有效冷却这种高性能设备。在这里，我们报告的蒸发电子冷却的非对称铝镓砷/砷化镓（AlGaAs/GaAs）双势垒异质结构。电子温度，Te，在量子阱（QW）和电极中的确定从光致发光测量。在300 K时，随着偏压的增加，量子阱中的Tein逐渐减小，直到250 K，直到达到最大共振隧穿条件，而电极中的Tein保持不变。这种行为是解释的蒸发冷却过程中，并定量描述了量子输运理论。
Rapid progress in high-speed, densely packed electronic/photonic devices has brought unprecedented benefits to our society. However, this technology trend has in reverse led to a tremendous increase in heat dissipation, which degrades device performance and lifetimes. The scientific and technological challenge henceforth lies in efficient cooling of such high-performance devices. Here, we report on evaporative electron cooling in asymmetric Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) double barrier heterostructures. Electron temperature,Te, in the quantum well (QW) and that in the electrodes are determined from photoluminescence measurements. At 300 K,Tein the QW is gradually decreased down to 250 K as the bias voltage is increased up to the maximum resonant tunneling condition, whereasTein the electrode remains unchanged. This behavior is explained in term of the evaporative cooling process and is quantitatively described by the quantum transport theory.