Design of high-energy terahertz sources based on optical rectification
Design of high-energy terahertz sources based on optical rectification
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DOI：
10.1364/oe.18.012311
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发表时间：
2010-06-07
期刊：
影响因子：
3.8
通讯作者：
Hebling, J.
中科院分区：
文献类型：
--
作者：
Fulop, J. A.;Palfalvi, L.;Hebling, J.
详细分析了飞秒激光脉冲光整流产生超短THz脉冲的倾斜脉冲前沿泵浦方案。结果表明，在由光栅和透镜组成的脉冲前倾装置中，成像误差会导致太赫兹光束强度分布的强不对称性和强发散性，从而限制了应用。优化设置参数，以减少这种失真。我们还表明，半导体可以提供一个有前途的替代铌酸锂在高能量太赫兹脉冲产生时，在较长的波长泵浦。这需要倾斜的脉冲前沿泵浦，然而小的倾斜角允许半导体容易地用于这种方案中。半导体可以有利于在较高的THz频率下产生具有高光谱强度的THz脉冲，而LiNbO3更适合于产生具有非常大的相对光谱宽度的THz脉冲。通过使用优化的方案，超短THz脉冲的能量的放大是可以预见的。(C)2010年美国光学学会
Detailed analysis of the tilted-pulse-front pumping scheme used for ultrashort THz pulse generation by optical rectification of femtosecond laser pulses is presented. It is shown that imaging errors in a pulse-front-tilting setup consisting of a grating and a lens can lead to a THz beam with strongly asymmetric intensity profile and strong divergence, thereby limiting applications. Optimized setup parameters are given to reduce such distortions. We also show that semiconductors can offer a promising alternative to LiNbO3 in high-energy THz pulse generation when pumped at longer wavelengths. This requires tilted-pulse-front pumping, however the small tilt angles allow semiconductors to be easily used in such schemes. Semiconductors can be advantageous for generating THz pulses with high spectral intensity at higher THz frequencies, while LiNbO3 is better suited to generate THz pulses with very large relative spectral width. By using optimized schemes the upscaling of the energy of ultrashort THz pulses is foreseen. (C) 2010 Optical Society of America