Mismatch characterization of small metal fringe capacitors
Mismatch characterization of small metal fringe capacitors
复制标题
小型金属边缘电容器的失配表征
DOI：
10.1109/cicc.2013.6658431
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
B. Murmann
中科院分区：
文献类型：
--
作者：
Vaibhav Tripathi;B. Murmann
尽管小金属边缘电容器对于实现低能量A/D转换器是重要的，但目前的文献缺乏关于其失配特性的实验数据。本文介绍了一种测试结构和测量结果有关的表征单层，横向场，0.45-fF和1.2-fF的单位金属电容器在32纳米SOI CMOS工艺。这些电容的测量推断的平均标准偏差分别为1.2%和0.8%，根据Pelgrom匹配定律确认面积缩放。
Even though small metal fringe capacitors are important for the realization of low-energy A/D converters, present literature is lacking experimental data on their mismatch characteristics. This paper describes a test structure and measurements results pertaining to the characterization of single-layer, lateral-field, 0.45-fF and 1.2-fF unit metal capacitors in a 32-nm SOI CMOS process. The measurement-inferred average standard deviations for these capacitances are 1.2% and 0.8%, respectively, confirming area scaling according to Pelgrom's matching law.