Sb-heterostructure diode detector W-band NEP and NEDT optimization
Sb-heterostructure diode detector W-band NEP and NEDT optimization
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Sb 异质结构二极管探测器 W 波段 NEP 和 NEDT 优化
DOI：
10.1117/12.667284
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
K. Holabird
中科院分区：
文献类型：
--
作者：
H. Moyer;R. Bowen;J. Schulman;D. H. Chow;S. Thomas;Tsung;J. Lynch;K. Holabird
Sb异质结二极管已经成为W波段毫米波成像相机的首选探测器，目前正在商业化或原型开发中。在这里，我们优化二极管阻抗，以产生最小的噪声等效功率（NEP）。目标是降低前端LNA所需的增益。两个二极管在W波段的灵敏度分别为3500和5500 V/W。它们的零偏差分电阻值意味着约翰逊噪声限制的NEP的0.98和0.83pW/Hz 1/2，分别，远低于从传统的偏置肖特基二极管。一个MMIC版本的二极管检测器已被模拟与集成带宽~ 30 GHz的W波段。在前端使用HRL W波段LNA时，模拟的温度灵敏度（NEΔT）<1°K。
Sb-heterostructure diodes have become the detector of choice for W-band millimeter wave imaging cameras now being commercialized or in prototype development. Here we optimize the diode impedance to yield a minimum noise equivalent power (NEP). The goal is to decrease the gain required of the front-end LNA. Measured W-band sensitivities for two diodes are 3500 and 5500V/W. Their zero bias differential resistance values imply Johnson noise limited NEP's of 0.98 and 0.83pW/Hz1/2, respectively, much less than obtained from conventional biased Schottky diodes. A MMIC version of the diode detector has been simulated with an integrated bandwidth of ~ 30 GHz at W-band. The simulated temperature sensitivity (NEΔT) with an HRL W-band LNA on the front end is <1°K.