Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
复制标题
DOI：
10.1038/nmat3011
复制
发表时间：
2011-05-01
期刊：
影响因子：
41.2
通讯作者：
Marks, Tobin J.
中科院分区：
文献类型：
--
作者：
Kim, Myung-Gil;Kanatzidis, Mercouri G.;Marks, Tobin J.
用于平板显示器、传感器阵列和柔性电路的大面积、低成本电子产品的发展在很大程度上取决于高通量制造工艺和具有适当性能特征的材料选择。对于不同的应用，可能需要高载流子迁移率，高导电性，大介电常数，机械灵活性或光学透明度。虽然金属氧化物薄膜有可能满足所有这些需求，但目前它们是通过缓慢且设备密集的技术（如溅射）沉积的。最近，高通量的溶液处理方案已经开发出来，但这些方案需要高退火温度（T（退火）bb0 400℃），这与柔性聚合物衬底不相容。在这里，我们报告了燃烧处理作为在低至200摄氏度的温度下溶液生长各种电子金属氧化物薄膜(In（2)O(3), a- zn - sn -O, a-In- zn -O， ITO）的新一般途径。我们表明，这种方法可以实现在柔性塑料衬底上制造高性能，光学透明的晶体管。
The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T(anneal) > 400 degrees C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In(2)O(3), a-Zn-Sn-O, a-In-Zn-O, ITO) at temperatures as low as 200 degrees C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.