Hole mobility improvement in Cu2O thin films prepared by the mist CVD method
Hole mobility improvement in Cu2O thin films prepared by the mist CVD method
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DOI：
10.7567/1882-0786/ab15b3
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发表时间：
2019-04
影响因子：
2.3
通讯作者：
Takumi Ikenoue;T. Kawai;Ryo Wakashima;M. Miyake;T. Hirato
中科院分区：
文献类型：
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作者：
Takumi Ikenoue;T. Kawai;Ryo Wakashima;M. Miyake;T. Hirato
采用喷雾化学气相沉积（CVD）方法制备了高迁移率的Cu 2 O薄膜。这是通过抑制氮杂质的污染和最佳生长条件来实现的，以获得不含CuO的单相Cu 2 O。使用乙二胺四乙酸作为络合剂，在干燥空气中生长120分钟，获得600 nm的Cu 2 O薄膜。所得薄膜的电阻率为2.8 × 102 Ω · cm，载流子浓度为1.2 × 1015 cm-3，空穴迁移率为19.3 cm 2· V-1 · s-1。该空穴迁移率与通过雾CVD方法获得的先前的Cu 2 O薄膜相比提高了两个或更多数量级。
A high-mobility Cu2O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu2O without CuO. A 600 nm Cu2O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 × 102 Ω · cm, carrier concentration of 1.2 × 1015 cm−3 and hole mobility of 19.3 cm2 · V−1 · s−1. This hole mobility improved by two or more orders of magnitude compared to that of previous Cu2O thin film obtained by the mist CVD method.