Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity
Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity
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DOI：
10.1109/jqe.2010.2053916
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发表时间：
2010-08
影响因子：
2.5
通讯作者：
C. Jin;O. Kojima;Tomoyasu Inoue;T. Kita;O. Wada;M. Hopkinson;K. Akahane
中科院分区：
文献类型：
--
作者：
C. Jin;O. Kojima;Tomoyasu Inoue;T. Kita;O. Wada;M. Hopkinson;K. Akahane
提出了一种基于垂直腔中自组装InAs/GaAs量子点的全光开关。对这种新型器件的两个基本方面进行了研究，包括量子点/腔的非线性与适当设计的反射镜和量子点内部的子带间载流子动力学。垂直反射型开关已被制作与非对称腔，其中包括12个周期的GaAs/Al 0.8Ga 0.2As的前镜和25个周期的后镜。利用量子点激发态实现了全光开关，时间常数可达23 ps，波长可调谐性超过30 nm，超低功耗小于1 fJ/μm2。这些结果表明，垂直腔中的量子点具有很大的优势，实现低功耗偏振不敏感的微米级开关器件的未来光通信和信号处理系统。
We propose an all-optical switch based on selfassembled InAs/GaAs quantum dots (QDs) within a vertical cavity. Two essential aspects of this novel device have been investigated, which includes the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. Vertical-reflection-type switches have been fabricated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As for the front mirror and 25 periods for the back mirror. All-optical switching via the QD excited states has been achieved with a time constant down to 23 ps, wavelength tunability over 30 nm, and ultralow power consumption less than 1 fJ/μm2 . These results demonstrate that QDs within a vertical cavity have great advantages to realize low-powerconsumption polarization-insensitive micrometer-sized switching devices for the future optical communication and signal processing systems.