Electrical properties of Cu2ZnSnS4 single crystal
Electrical properties of Cu2ZnSnS4 single crystal
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DOI：
10.1109/pvsc.2013.6745011
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发表时间：
2013-06
期刊：
影响因子：
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通讯作者：
Akira Nagaoka;K. Yoshino;H. Miyake;T. Taniyama;K. Kakimoto
中科院分区：
文献类型：
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作者：
Akira Nagaoka;K. Yoshino;H. Miyake;T. Taniyama;K. Kakimoto
Cu_2ZnSnS_4（CZTS）的电子性质与黄铜矿Cu（In，Ga）Se_2（CIGS）的电子性质相似，因此引起了人们的极大兴趣。然而，对直拉晶体的基础研究，即单晶生长和电学性质的研究却很少。在这里，我们报告CZTS单晶生长的解决方案和电气性能。根据CZTS-Sn相图确定了CZTS的最佳生长条件为：生长温度900 ℃，溶液中X = 70mol%。结果表明，该材料的导电机制具有缺陷和带输运两条路径，缺陷路径表现为M-VRH，带路径表现为典型的热激活导电。
Cu2ZnSnS4 (CZTS) has attracting considerable interest because first principle calculation predict that its electronic properties must be similar to chalcopyrite Cu(In, Ga)Se2 (CIGS). However, the fundamental studies of CZTS, which are single crystal growth and electrical property, are little known. Here, we report on CZTS single crystal growth from solution and electrical properties. Optimum growth condition of CZTS was determined based on CZTS-Sn phase diagram, which was growth temperature 900 C and X= 70 mol% solution. It is shown that the conduction mechanism have two-path system (defects and band transports), which were characterized by M-VRH for the defect path and typical thermal activation conduction for band path.