RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON
RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON
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DOI：
10.1016/0022-3093(79)90085-1
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发表时间：
1979-01-01
影响因子：
3.5
通讯作者：
CARDONA, M
中科院分区：
文献类型：
--
作者：
BERMEJO, D;CARDONA, M
讨论了纯和氢化非晶锗和硅的斯托克斯拉曼光谱。观察到由GeGe和SiSi键振动引起的一级和二级结构以及由GeH和SiH键引起的一级结构。所观察到的结构的共振行为和极化比是根据介电常数-键极化模型来呈现和解释的。
The Stokes Raman spectra of pure and hydrogenated amorphous germanium and silicon are discussed. First- and second-order structures due to the vibration of GeGe and SiSi bonds and also first-order structures due to GeH and SiH bonds are observed. The resonance behaviour and the polarization ratio of the observed structures are presented and interpreted in terms of a dielectric constant-bond polarizability model.