Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy
Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy
复制标题
金属有机气相外延生长的 InGaAs/InP 多量子阱结构界面粗糙度的截面扫描隧道显微镜研究
DOI：
10.1143/jjap.42.1548
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
A. Nakamura
中科院分区：
文献类型：
--
作者：
I. Yamakawa;T. Yamauchi;R. Oga;Y. Fujiwara;Y. Takeda;A. Nakamura
通过横截面扫描隧道显微镜 (STM) 研究了金属有机气相外延生长的 InxGa1-xAs/InP (x=0.53) 多量子阱 (MQW) 的界面粗糙度。 MQW结构由InP（001）衬底上125个周期的11 nm宽的阱层和44 nm宽的势垒层组成。观察到的STM图像表明，与InP-on-InGaAs界面相比，InGaAs-on-InP界面极其清晰； InGaAs-on-InP 界面上的粗糙度和平台尺寸分别为 1-2 单层 (ML) 和 31 nm，而 InP-on-InGaAs 界面上的粗糙度和平台尺寸分别为 3-4 ML 和 9 nm。 InP-on-InGaAs 界面观察到的大粗糙度是根据 InGaAs 表面上残留 As 原子的结合来解释的。
Interfacial roughness of InxGa1-xAs/InP (x=0.53) multiple quantum wells (MQW) grown by metalorganic vapor phase epitaxy has been investigated by cross-sectional scanning tunneling microscopy (STM). The MQW structure is composed of 125 periods of 11-nm-wide well layers and 44-nm-wide barrier layers on an InP (001) substrate. The observed STM images have revealed that the InGaAs-on-InP interface is extremely sharp compared to the InP-on-InGaAs interface; the roughness and terrace size on the InGaAs-on-InP interface are 1–2 monolayers (ML) and 31 nm, respectively, while they are 3–4 ML and 9 nm on the InP-on-InGaAs interface. The large roughness observed for the InP-on-InGaAs interface is interpreted in terms of the incorporation of residual As atoms on the InGaAs surface.