Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K
Contact resistance of various metallisation schemes to superconducting boron doped diamond between 1.9 and 300 K
复制标题
各种金属化方案与超导掺硼金刚石的接触电阻在 1.9 至 300 K 之间
DOI：
10.1016/j.carbon.2021.02.079
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发表时间：
2021
期刊：
影响因子：
10.9
通讯作者：
Manifold S
中科院分区：
文献类型：
--
作者：
Manifold S
钻石是一种在许多设备应用中具有潜力的材料。尤其是高掺硼金刚石由于其超导性和高杨氏模数而备受关注。稳定、低阻、欧姆接触的制造是确保器件正常工作的关键。以前的工作已经确定了在室温和更高温度下形成与钻石适当接触的几种方法的有效性，包括碳化物形成和碳溶金属化方案。本文通过改进的传输线模型(TLM)测量，验证了几种接触方式(钛、铬、钼、钽和钯)与高掺硼纳米晶金刚石在低温下的稳定性。虽然所有的接触方案都保持欧姆，但在Tc处发现了显著的温度依赖性，在最低温度下，接触电阻从(8.83x±0.10)×10−4Ω/cm的Ti/Pt/Au到(8.07x±0.62)x×10−6Ω/cm的Ta/Pt/Au。
Diamond is a material that offers potential in numerous device applications. In particular, highly boron doped diamond is attractive due to its superconductivity and high Young’s Modulus. The fabrication of stable, low resistance, ohmic contacts is essential to ensure proper device function. Previous work has established the efficacy of several methods of forming suitable contacts to diamond at room temperature and above, including carbide forming and carbon soluble metallisation schemes. Herein, the stability of several contact schemes (Ti, Cr, Mo, Ta and Pd) to highly boron doped nanocrystalline diamond was verified down to the cryogenic temperatures with modified Transmission Line Model (TLM) measurements. While all contact schemes remained ohmic, a significant temperature dependency is noted atTcand at the lowest temperatures the contact resistances ranged from Ti/Pt/Au with (8.83 ± 0.10) × 10−4Ω cm to Ta/Pt/Au with (8.07 ± 0.62) × 10−6Ω cm.