Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties
Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties
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DOI：
10.1063/1.3646104
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发表时间：
2011-10
影响因子：
4
通讯作者：
A. Laha;B. Ai;P. Babu;A. Fissel;H. Osten
中科院分区：
文献类型：
--
作者：
A. Laha;B. Ai;P. Babu;A. Fissel;H. Osten
我们报道了碳掺杂对生长在硅衬底上的外延Gd2O3电学性能的影响。在外延Gd2O3中掺入少量的碳（0.2-0.5 vol. %）已被发现对改善电学性能非常有用，特别是通过降低泄漏电流行为。掺杂对氧化层结构质量的影响可以忽略不计。我们发现，在高温下生长的氧化物中经常发现的氧空位缺陷的不利影响可以通过在生长过程中适量的碳掺杂来消除。
We report on the effect of carbon doping on electrical properties of epitaxial Gd2O3 grown on Si substrates. The incorporation of small amounts of carbon (0.2-0.5 vol. %) into epitaxial Gd2O3 has been found to be very useful in improving the electrical properties especially by reducing the leakage current behavior. The doping has a negligible impact on the structural quality of the oxide layer. We show that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature can be eliminated by moderate amount of carbon doping during growth.