Suppression of Narrow-Line Defects in Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Crystals through Uninterrupted Solution Stirring during Growth Process
Suppression of Narrow-Line Defects in Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Crystals through Uninterrupted Solution Stirring during Growth Process
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DOI：
10.1143/jjap.46.324
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发表时间：
2007-01
影响因子：
1.5
通讯作者：
Yoshinori Takahashi;S. Onzuka;S. Brahadeeswaran;M. Yoshimura;Y. Mori;T. Sasaki
中科院分区：
文献类型：
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作者：
Yoshinori Takahashi;S. Onzuka;S. Brahadeeswaran;M. Yoshimura;Y. Mori;T. Sasaki
研究了窄线缺陷（NLD）对有机4-二甲氨基-N-甲基-4-苯乙烯基甲苯磺酸盐（DAST）晶体抗激光损伤能力的影响。NLD是体缺陷并且可以被分类为沿沿着a轴的平面缺陷。由于NLD被认为是由晶体生长过程中溶液环境的不稳定性引起的，因此我们在整个生长过程中引入了溶液搅拌。我们的实验结果表明，溶液搅拌是有效地减少NLD在DAST晶体的数量相比，传统的生长工艺。我们还从化学腐蚀实验的结果讨论了NLD的形成机理和溶液搅拌的影响。
We investigated narrow-line defects (NLDs) as a possible cause of the degradation of the bulk laser-induced-damage tolerance of organic 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) crystals, which are used for high-power terahertz (THz) application. NLDs are bulk defects and can be classified as planar defects along a-axis. Since the NLDs were considered to be caused by instabilities in the solution environment during the crystal growth, we introduced solution stirring throughout the growth process. Our experimental results showed that solution stirring was effective in decreasing the number of NLDs in DAST crystals in comparison with the conventional growth process. We also discuss the mechanism of NLD formation and the effect of solution stirring from the results of chemical-etching experiments.