Marked Enhancement of Optical Kerr Signal in Proportion to the Fourth Power of Quality Factor of a GaAs/ AlAs Multilayer Cavity
Marked Enhancement of Optical Kerr Signal in Proportion to the Fourth Power of Quality Factor of a GaAs/ AlAs Multilayer Cavity
复制标题
光克尔信号的显着增强与 GaAs/AlAs 多层腔品质因数的四次方成比例
DOI：
10.1143/jjap.48.080203
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发表时间：
2009
影响因子：
1.5
通讯作者：
Toshiro Isu
中科院分区：
文献类型：
--
作者：
Takahiro Kitada;Toshiyuki Kanbara;Shinsuke Yano;Ken Morita;Toshiro Isu
用自洽传输矩阵法数值模拟了GaAsAlAs多层腔中的增强光克尔效应。由于多层腔具有较高的品质因数(Q)，模拟的腔模(λ∼150 4 nm)的克尔信号强度随着多层膜周期的增加而显著增加。模拟结果表明，克尔信号强度与Q4成正比增加，这很好地解释了由于(1)泵浦光强的内部光场引起的大的折射率变化和(2)多层腔中探测光的长光子寿命引起的非线性相移的增强。
The enhanced optical Kerr effect in a GaAs/AlAs multilayer cavity has been studied by numerical simulation using the self-consistent transfer matrix method. The simulated Kerr signal intensity of the cavity mode (λ∼ 1504 nm) markedly increases with increasing multilayer period because of the high quality factor (Q) of the multilayer cavity. The simulation results reveal that Kerr signal intensity increases in proportion to Q 4, which is well explained by the enhanced nonlinear phase shift owing to (1) the large refractive index change induced by the strong internal optical field of the pump light and (2) the long photon lifetime of the probe light in the multilayer cavity.