Millimeter-wave bandpass filter using high-Q conical inductors and MOM capacitors
Millimeter-wave bandpass filter using high-Q conical inductors and MOM capacitors
复制标题
使用高 Q 锥形电感器和 MOM 电容器的毫米波带通滤波器
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
V. Vanukuru
中科院分区：
文献类型：
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作者：
V. Vanukuru
本文介绍了 60 GHz 下集总毫米波窄带通滤波器的高效实现。该毫米波滤波器采用布局优化的锥形螺旋电感器，与标准螺旋电感器相比，该电感器具有更高的品质因数 (Q) 和自谐振频率值。该滤波器还使用叉指金属-氧化物-金属电容器，在这些高频下，该电容器的 Q 值高于氮化物金属-绝缘体-金属 (MIM) 电容器。该滤波器采用 0.18 μm 高电阻率 RF 绝缘体上硅 CMOS 技术制造。该滤波器的中心频率为60 GHz，3 dB带宽为8 GHz，分数带宽为13.3%，负载Q为7.5，占用面积为(150×215)μm2。由于仅使用两个顶部厚金属并排除了 MIM 电容器，滤波器的蒙特卡罗模拟显示了针对工艺变化的出色鲁棒性。
This paper describes an efficient implementation of a lumped millimeter(mm)-wave narrow bandpass filter at 60 GHz. The mm-wave filter uses layout optimized conical spiral inductors which are shown to have higher quality factor (Q) and self resonant frequency values than standard spiral inductors. The filter also uses interdigital metal-oxide-metal capacitors which are shown to have Q values than nitride metal-insulator-metal (MIM) capacitors at these high frequencies. The filter is fabricated in 0.18 μm high resistivity RF silicon-on-insulator CMOS technology. The filter has a center frequency of 60 GHz and 3 dB bandwidth of 8 GHz, with a fractional bandwidth of 13.3% and a loaded Q of 7.5 occupying an area of (150×215)μm2. Monte-carlo simulations of the filter demonstrate excellent robustness against process variations due to usage of only two top thick metals and exclusion of MIM capacitors.