UV Thermal Imaging of RF GaN Devices with GaN Resistor Validation
UV Thermal Imaging of RF GaN Devices with GaN Resistor Validation
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RF GaN 器件的紫外热成像以及 GaN 电阻器验证
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
A. Shakouri
中科院分区：
文献类型：
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作者：
D. Kendig;G. Pavlidis;S. Graham;Justin Reiter;Michael Gurr;D. Altman;Stephen Huerster;A. Shakouri
先进微波器件的特征不断缩小，器件复杂性不断增加，这增加了充分理解亚微米尺度器件热行为的挑战。预测器件的静态和动态热行为对于确保性能和器件可靠性之间的最佳权衡至关重要。基于热反射原理的热成像可以通过提供亚微米空间分辨率和皮秒范围内的时间分辨率来满足这些紧凑的高功率密度RF器件所带来的挑战。该技术克服了传统热成像技术（如IR和显微拉曼）的局限性，以及测量GaN器件的一些特定挑战。在过去，热反射成像已被证明可以使用可见波长激发源准确估计金属的温升。本文提出了一种新的方法来估计温度直接在GaN表面上使用紫外波长。这些紫外线热反射测量验证了与测量的片上GaN梅萨电阻。对Si和SiC衬底上的商用GaN HEMT的场板顶部和GaN沟道内部的温度测量进行了比较。介绍了热反射成像技术的优缺点。
Shrinking features and growing device complexity in advanced microwave devices has increased the challenge of fully understanding device thermal behavior on the sub-micron scale. Predicting the device static and dynamic thermal behavior is essential for ensuring optimal tradeoffs between performance and device reliability. Thermal imaging based on the Thermoreflectance Principle can meet the challenges imposed by these compact, high power density RF devices by providing submicron spatial resolution and temporal resolution in the picosecond range. This technique overcomes the limitations of traditional thermal imaging techniques such as IR and Micro-Raman and some of the specific challenges in measuring GaN devices. In the past, Thermoreflectance Imaging has been shown to accurately estimate the temperature rise of metals using visible wavelength excitation sources. This paper presents a novel method to estimate the temperature directly on GaN surfaces using UV wavelengths. These UV thermoreflectance measurements were verified with measurement of an on-chip GaN mesa resistor. Temperature measurements on top of the field plate and inside the GaN channel were compared for a commercial GaN HEMT both on Si and SiC substrate. The advantages and disadvantages will be presented for the thermoreflectance technique for thermal imaging.
用于精确测量浇口温度的金刚石微型拉曼温度计
影响因子：
4
作者：
Simon R
通讯作者：
Simon R