Membrane Tip Probes for On-Wafer Measurements in the 220 to 325 GHz Band
Membrane Tip Probes for On-Wafer Measurements in the 220 to 325 GHz Band
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用于 220 至 325 GHz 频段晶圆上测量的膜探针
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发表时间：
2008
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通讯作者：
A. Fung
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作者：
R. Campbell;M. Andrews;L. Samoska;A. Fung
我们已经开发了一种膜尖晶圆探针的无源结构，半导体器件和放大器在220至325 GHz的WR-3波导波段的晶圆测量。该探头提供Oleson微波实验室矢量网络分析仪（VNA）毫米波扩展头和晶圆上接地信号接地触点之间的连接。探头有一段WR-3波导，带标准法兰，波导到同轴过渡，提供电场发射和背面短路的调整。从波导到同轴电缆过渡，UT-013同轴电缆的短长度连接到一个薄膜膜，其中包括一个同轴电缆到微带过渡和三个晶圆接触制造的光刻使用级联Microtech的薄膜工艺。晶圆触点采用与Cascade Pyramid系列相同的机械结构和冶金工艺，可承受数百万次触地，即使在铝焊盘上也只有几十毫欧的接触电阻。使用Cascade的140至220 GHz VNA系统对一对WR-3探头和标准校准基板进行的初步测量表明，损耗主要取决于同轴到波导过渡和Oleson微波实验室毫米波扩展器头之间的波导长度。WR-5波段VNA的测量仅限于WR-3波段的低三分之一。第二组探针使用明显更短的波导部分构建。然后在Jet Propulsion Labs WR-3 VNA系统上测量原始探头和短波导探头[1，2]。从波导凸缘到探针尖端，通过较长探针的损耗超过5 dB，对于WR-3波段的大部分，通过短波导探针的损耗接近2.5 dB，在300 GHz以上损耗增加。300 GHz以上损耗增加显然是由于在我们测试的探头测量期间与背面短路接触不良。由于波导探针在接地-信号接地膜上具有电浮动中心触点，因此我们还开发了集成偏置Ts。迄今为止，偏置Ts的带内性能仅在WR-5 VNA上测量，带外性能使用DC至110 GHz VNA测量。Cascade Microtech 2430 NW 206 Ave比弗顿，OR 97006喷气推进实验室加利福尼亚理工学院，M/S 168-314 4800 Oak格罗夫驱动器帕萨迪纳，CA 91109这项工作部分得到了加州理工学院喷气推进实验室的支持，根据与美国国家航空航天局的合同。第18届空间太赫兹技术国际研讨会
We have developed a membrane-tip wafer probe for on-wafer measurements of passive structures, semiconductor devices and amplifiers in the 220 to 325 GHz WR-3 waveguide band. The probe provides the connection between an Oleson Microwave Labs Vector Network Analyzer (VNA) mm-wave extender head and on-wafer ground-signalground contacts. The probe has a section of WR-3 waveguide with a standard flange, a waveguide-to-coax transition with provisions for adjustment of both the E-field launch and back short. From the waveguide-to-coax transition, a short length of UT-013 coax connects to a thin-film membrane that includes a coax-to-microstrip transition and three wafer contacts manufactured photolithograpically using Cascade Microtech’s thin-film process. The wafer contacts use the same mechanical structure and metallurgy as Cascade’s Pyramid probe series, and are rated for millions of touchdowns with contact resistance of a few tens of milliohms even on aluminum pads. Initial measurements on a pair of WR-3 probes and a standard calibration substrate with Cascade’s 140 to 220 GHz VNA system suggest that loss is dominated by the length of waveguide between the coax-to-waveguide transition and the Oleson Microwave Lab mmwave extender head. Measurements on the WR-5 band VNA are limited to the lower third of the WR-3 band. A second set of probes was built using significantly shorter waveguide sections. The original probes and short waveguide probes were then measured on the Jet Propulsion Labs WR-3 VNA system [1,2]. Loss through the longer probes was more than 5 dB from waveguide flange to probe tip, and loss through the short waveguide probes was near 2.5 dB for most of the WR-3 band, with increased loss above 300 GHz. Increased loss above 300 GHz is apparently due to poor contact with the back short during the measurements for the probe we tested. Since the waveguide probes have electrically floating center contacts on the Ground-SignalGround membrane, we have also developed integrated bias Ts. To date, in-band performance of the bias Ts has only been measured on the WR-5 VNA, and the out-of-band performance measured using a DC to 110 GHz VNA. Cascade Microtech 2430 NW 206 Ave Beaverton, OR 97006 Jet Propulsion LaboratoryCalifornia Institute of Technology, M/S 168-314 4800 Oak Grove Drive Pasadena, CA 91109 This work was supported in part by the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. 18th International Symposium on Space Terahertz Technology