A Fully Integrated 0.18- $\mu{\hbox {m}}$ CMOS Transceiver Chip for $X$-Band Phased-Array Systems
A Fully Integrated 0.18- $\mu{\hbox {m}}$ CMOS Transceiver Chip for $X$-Band Phased-Array Systems
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DOI：
10.1109/tmtt.2012.2195020
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发表时间：
2012-05
影响因子：
4.3
通讯作者：
Kiarash Gharibdoust;Naser Mousavi;M. Kalantari;Mohsen Moezzi;A. Medi
中科院分区：
文献类型：
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作者：
Kiarash Gharibdoust;Naser Mousavi;M. Kalantari;Mohsen Moezzi;A. Medi
采用0.18-CMOS工艺设计和制造X波段核心芯片，可显着减少实现有源波束形成器T/R模块所需的单片微波集成电路数量。核心芯片由两条 RX/TX 路径组成，每条路径均包含一个 6-b 移相器、一个 6-b 衰减器以及两个输入和输出放大器。 A new architecture for realizing such a core chip system and a low loss circuit for 5.625° phase shift block are proposed. The overall rms phase and gain errors are better than 2° and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the band of interest.
An X-band core chip is designed and fabricated in 0.18- CMOS technology, which can significantly reduce the monolithic microwave integrated circuit count required for realizing an active beam-former T/R module. The core chip consists of two RX/TX paths, each of which includes a 6-b phase shifter, a 6-b attenuator, along with two input and output amplifiers. A new architecture for realizing such a core chip system and a low loss circuit for 5.625° phase shift block are proposed. The overall rms phase and gain errors are better than 2° and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the band of interest.