Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies
Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies
复制标题
DOI：
10.1109/tns.2008.2006980
复制
发表时间：
2008-12
影响因子：
1.8
通讯作者：
Chen Shuming;Liang Bin;Liu Biwei;Liu Zheng
中科院分区：
文献类型：
--
作者：
Chen Shuming;Liang Bin;Liu Biwei;Liu Zheng
采用三维混合模式模拟方法，研究了体相和PD SOI反相链中数字置位脉冲宽度的温度依赖性。研究发现，温度对数字电视有非常重要的影响。当LET为60MeVmiddotcm2/mg时，当温度从-55℃上升到125℃时，体型和浮动式SOI逆变器链的数字置位脉冲宽度显著增加，而在具有理想体结的SOI逆变器链中，数字置位脉冲宽度几乎不随温度的升高而变化。详细的分析表明，随着温度的升高，脉冲展宽主要是由于双极放大的增强。
Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in bulk and PD SOI inverter chains has been studied. It was found that temperature has a very important impact on digital SET. Using a LET of 60 MeVmiddotcm2 /mg, when temperature rises from -55 to 125degC , the digital SET pulse width in bulk and floating SOI inverter chains rises remarkably, while in a SOI inverter chain with ideal body tie, the digital SET pulse width is almost constant with rising temperature. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.