Doping dependence of self-diffusion in germanium and the charge states of vacancies
Doping dependence of self-diffusion in germanium and the charge states of vacancies
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锗中自扩散的掺杂依赖性和空位的电荷态
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
E. Haller
中科院分区：
文献类型：
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作者：
T. Südkamp;H. Bracht;G. Impellizzeri;J. L. Hansen;A. Larsen;E. Haller
使用二次离子质谱法研究了 526 至 749°C 温度下硼掺杂锗的自扩散。与内在条件相比，受主掺杂下的自扩散被延迟。这证明了带电空位在自扩散中的贡献。考虑到施主掺杂下双负电空位的主导地位，自扩散的掺杂依赖性最好用所有掺杂条件下单负电空位和双负电空位的逆能级排序来描述。能级排序解释了施主掺杂下双电荷空位的主导地位，以及它们的贡献随着受主掺杂的增加而减少，直到中性空位介导自扩散。
Self-diffusion in boron-doped germanium has been studied at temperatures between 526 and 749 °C with secondary ion mass spectrometry. Self-diffusion under acceptor doping is retarded compared to intrinsic conditions. This demonstrates the contribution of charged vacancies in self-diffusion. Taking into account the dominance of doubly negatively charged vacancies under donor doping, the doping dependence of self-diffusion is best described with an inverse level ordering for singly and doubly negatively charged vacancies for all doping conditions. The level ordering explains the dominance of doubly charged vacancies under donor doping and their decreasing contribution with increasing acceptor doping until neutral vacancies mediate self-diffusion.