Submicrosecond correlations in photoluminescence from InAs quantum dots
Submicrosecond correlations in photoluminescence from InAs quantum dots
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DOI：
10.1103/physrevb.69.205324
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发表时间：
2004-05-01
影响因子：
3.7
通讯作者：
Yamamoto, Y
中科院分区：
文献类型：
--
作者：
Santori, C;Fattal, D;Yamamoto, Y
光子相关测量揭示了单个InAs量子点的光发射中的记忆效应，时间尺度从10到800 ns。与以上带的光激发，观察到的长时间尺度的负相关（反聚束），而与准共振激发，观察到的正相关（闪烁）。一个简单的模型的基础上长寿命的带电状态，提出了近似解释所观察到的行为，提供洞察激发过程。这种记忆效应可能会限制基于单量子点的光发射器的内部效率，并且对于所提出的量子计算方案也可能是有问题的。
Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with time scales from 10 to 800 ns. With above-band optical excitation, a long-time scale negative correlation (antibunching) is observed, while with quasiresonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.