Precursor route pentacene metal-insulator-semiconductor field-effect transistors
Precursor route pentacene metal-insulator-semiconductor field-effect transistors
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DOI：
10.1063/1.361071
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发表时间：
1996-02-15
影响因子：
3.2
通讯作者：
Mullen, K
中科院分区：
文献类型：
--
作者：
Brown, AR;Pomp, A;Mullen, K
金属-绝缘体-半导体场效应晶体管已经用并五苯作为有源半导体构造。并五苯通过旋涂从可溶性前体处理。一个简单的热转换产生的晶体管的载流子迁移率高达9 × 10（-3）cm（2）V-1 s（-1）和电流调制的数量级为10（5）。电荷的耗尽对器件的运行至关重要。逆变器表现出电压放大的数据。(C)1996年美国物理学会。
Metal-insulator-semiconductor field-effect transistors have been constructed with pentacene as the active semiconductor. The pentacene is processed by spin coating from a soluble precursor. A simple thermal conversion yields transistors with carrier mobilities as high as 9 x 10(-3) cm(2) V-1 s(-1) and current modulations of the order of 10(5). Depletion of charge is essential to the device operation. Data for an invertor exhibiting voltage amplification are presented. (C) 1996 American Institute of Physics.