Modular Design with 2D Topological-Insulator Building Blocks: Optimized Synthesis and Crystal Growth and Crystal and Electronic Structures of BixTeI (x = 2, 3)
Modular Design with 2D Topological-Insulator Building Blocks: Optimized Synthesis and Crystal Growth and Crystal and Electronic Structures of BixTeI (x = 2, 3)
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DOI：
10.1021/acs.chemmater.6b05038
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发表时间：
2017-01
影响因子：
8.6
通讯作者：
A. Zeugner;Martin Kaiser;P. Schmidt;T. Menshchikova;I. P. Rusinov;A. Markelov;W. V. D. Broek;E. Chulkov;T. Doert;M. Ruck;A. Isaeva
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作者：
A. Zeugner;Martin Kaiser;P. Schmidt;T. Menshchikova;I. P. Rusinov;A. Markelov;W. V. D. Broek;E. Chulkov;T. Doert;M. Ruck;A. Isaeva
拓扑体材料的结构工程系统地探讨了关于纳入的屈曲铋层[Bi 2]，这是一个2D拓扑绝缘体本身，到层状BiTeI主机结构。先前已知的碘化碲化铋，BiTeI和Bi2TeI，提供与自旋电子学相关的物理性质。因此，一个新的表亲Bi3TeI（sp. gr.R3m，a = 440.12（2）pm，c = 3223.1（2）pm）加入了这个行列，并扩展了这个结构家族。Bi3TeI = [Bi2][BiTeI]表示具有严格交替的构建块的堆叠。确定了Bi2TeI和Bi3TeI的可重复合成和晶体生长的条件，从而产生毫米级的片状晶体，并能够进行直接测量。用X射线衍射和电子显微镜研究了Bi_2TeI和Bi_3TeI的晶体结构。DFT计算预测金属性质的Bi3TeI和非常规的表面状态驻留在各种表面终端。这种状态是作为一种…
Structural engineering of topological bulk materials is systematically explored with regard to the incorporation of the buckled bismuth layer [Bi2], which is a 2D topological insulator per se, into the layered BiTeI host structure. The previously known bismuth telluride iodides, BiTeI and Bi2TeI, offer physical properties relevant for spintronics. Herewith a new cousin, Bi3TeI (sp.gr. R3m, a = 440.12(2) pm, c = 3223.1(2) pm), joins the ranks and expands this structural family. Bi3TeI = [Bi2][BiTeI] represents a stack with strictly alternating building blocks. Conditions for reproducible synthesis and crystal-growth of Bi2TeI and Bi3TeI are ascertained, thus yielding platelet-like crystals on the millimeter size scale and enabling direct measurements. The crystal structures of Bi2TeI and Bi3TeI are examined by X-ray diffraction and electron microscopy. DFT calculations predict metallic properties of Bi3TeI and an unconventional surface state residing on various surface terminations. This state emerges as a...