Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching
Guidelines for Ferroelectric FET Reliability Optimization: Charge Matching
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DOI：
10.1109/led.2020.3011037
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发表时间：
2020-09-01
影响因子：
4.9
通讯作者：
Ni, Kai
中科院分区：
文献类型：
--
作者：
Deng, Shan;Liu, Zhan;Ni, Kai
从理论上研究了铁电场效应管（FeFET）的优化原理，其核心是铁电场效应管与其底层半导体之间的电荷匹配。这封信表明，通过适当降低铁电极化电荷及其背景介电常数，可以改善电荷匹配，同时实现：i)在编程，读取和保留期间减少层间和半导体电场，从而延长续航时间和保留时间；Ii)改善记忆窗口；iii)通过提供全极化开关来抑制器件间的变化。这些特性为本文详细介绍的FeFET优化建议指南提供了动力。
An optimization principle for ferroelectric FET (FeFET), centered around charge matching between the ferroelectric and its underlying semiconductor, is theoretically investigated. This letter shows that, by properly reducing the ferroelectric polarization charge and its background dielectric constant, charge matching can be improved to enable simultaneously: i) reduction of the interlayer and semiconductor electric fields during programming, reading, and retention, leading to prolonged endurance and retention; ii) improvement of the memory window; and iii) suppression of device-to-device variations by affording full polarization switching. These attributes provide an incentive for the presentation of the proposed guidelines for FeFET optimization as detailed in this letter.